MBE systems of STE3N* series are specially designed with consideration to specific A3N materials growth and ensures extremely wide range of available growth parameters (effective flux nitrogen, max substrate temperature, process vacuum level). STE3N* successfully resolved the problem of providing extremely high temperatures on the substrate (> 1200°C) as well as reliable work of heating stage during a long growth cycle. It allows to grow high-quality, thick AlN/AlGaN buffer layers using ammonia as active nitrogen source. This technology results in growth of active layers with extremely low dislocation density, record for MBE.

Compact new STE75 MBE system is designed for growth of А3В5, wide band А2В6 and А3N compounds (in special version). STE75 is intended as compact, versatile and power tool for wide range of R&D in the field of modern semiconductor applications based on А3В5/А2В6 and III-Nitrides.

STE35 is a modern technological platform for precise growth of epitaxial layers on wafers with diameter of 2”, 3”, 100 mm, as well as three 2” wafers on the same platen. MBE system STE35 is intended for R&D activities and pilot production of epitaxial structures in “lab-to-lab” mode in InAlGaAsSb/GaAs systems.

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