Compact new STE75 MBE system is designed for growth of А3В5, wide band А2В6 and А3N compounds (in special version). STE75 is intended as compact, versatile and power tool for wide range of R&D in the field of modern semiconductor applications based on А3В5/А2В6 and III-Nitrides.

In 2014 Rostec completed collection and consolidation of fragmented industrial assets, and the strong growth of the company began. This demanded to update the strategy.

STE35 is a modern technological platform for precise growth of epitaxial layers on wafers with diameter of 2”, 3”, 100 mm, as well as three 2” wafers on the same platen. MBE system STE35 is intended for R&D activities and pilot production of epitaxial structures in “lab-to-lab” mode in InAlGaAsSb/GaAs systems.

Automated station for E-Beam evaporation of high-quality thin-film compositions in UHV The System was designed in accordance with “lab to fab” approach and is intended for both intensive R&D activities and pilot production. The system design enables to integrate it into multipurpose UHV cluster process line. Maximum quantity of wafers in one process is: 3х3” or 6х2”. Wafers are installed on a spherical-profile holder, considering specific features of “lift-off” process.

New versatile System for magnetron and thermo resistance sputtering for batch wafer processing STE MS900 System allows to sputter multicomponent layers (metals, resistant layers etc.) on the substrate heated up to 500°C. System is designed for both active R&D and small­scale production. Maximum number of sputtering substrates in the same process: 150 mm – 6 pcs. Targets with diameter of 6’’ ensure uniformity of ±2% for 100 mm. Magnetic mount makes targets replacement very easy.

System for high-temperature treatment of semiconductor wafers in controlled gas, vacuum, oxidizingor deoxidizing atmosphere Special design of aluminum chamber allows carrying out thermal annealing at extremely high temperatures (up to 1300°С) in combination with long annealing time (up to 60 min). This system can be used both for R&D activities and for pilot production. Maximum diameter of wafers is 150 mm.