22FDX employs 22nm Fully-Depleted Silicon-On-Insulator (FD-SOI) technology that delivers outstanding performance at extremely low power with the ability to operate at 0.4 Volt ultra low power and at 1 pico amp per micron for ultra low standby leakage. For applications such as 5G mmWave and NB-IoT, 22FDX enables a level of integration while maintaining power efficiency that is not achievable in bulk CMOS, resulting in up to a 50% system BoM cost savings. 22FDX is now in production and delivering on yield, power and performance expectations.