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Semiconductor laser head ILPI-135А
Semiconductor pulsed mode laser head ILPI-135А consists of a AlGaAs/GaAs laser diode matrix, manufactured using MOCVD technology, a housing and a cover with a glass window. The device is designed for use as a radiation source in illuminators, rangefinders and medical devices.
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Shvabe Description
Power is measured in full angle (a cone with at least 74° apex angle)
Temperature drift of the emission wavelength — no more than 0,3 nm/ °C Operative temperature of the case - minus 55 ... + 70 °C
Minimum operating time - 109 pulses
The specific value of the pump current is indicated in passport or label. Produced at POLYUS Research Institute of M.F. Stelmakh JSC
Temperature drift of the emission wavelength — no more than 0,3 nm/ °C Operative temperature of the case - minus 55 ... + 70 °C
Minimum operating time - 109 pulses
The specific value of the pump current is indicated in passport or label. Produced at POLYUS Research Institute of M.F. Stelmakh JSC
Specification
1. Specification_RUS.docx