The plant is designed for melting raw materials, growing artificial corundum crystals from the melt and
annealing grown crystals used as raw materials for the manufacture of substrates in the production of
ultra-bright diodes and power electronics products.
The kiropoulos method is used to grow crystals. The advantages of this method are the high quality of
the resulting product, high crystal growth rate and the ability to automate the process.
Technical specifications
Crystal weight 28/55 kg
External dimensions of the crucible d250x370mm
The crucible material tungsten
The method of heating, resistive heating
Working pressure in the chamber, not more than 10-6mm. RT.st.
Power consumption 60/80 kW
Voltage maintenance accuracy ± 0.1%
Speed of moving of a rod of 0.1-2.0 mm/h
The frequency of rotation of the stem 0-20 rpm
Cooling
Cooling water consumption 6m3 / hour
Inlet cooling water pressure, not less than 0.2 MPa
Working gas / vacuum/ 10-6mm RT.st
Electric characteristic
Power supply 380 V
The frequency of the mains 50 Hz
Installed capacity 60 kW
Heater supply voltage 0-12 V
Control Cabinet power supply 220V
Overall dimensions of the installation
Height maximum 2700 mm
Length 2050 mm
Width 1600 mm
Artificial sapphires are widely used in electronic, optical, medical industries