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Sapphire wafers
Due to its dielectric and crystallographic properties, sapphire is an outstanding material for producing various wafers for electronic applications. Sapphire is the basic material in LED production, as its crystal lattice allows the growth of an epitaxial layer of gallium nitride (GaN) with fine performance characteristics and a favorable price/quality ratio; also, it is considerably widely used.
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MonocrystalDescription
Among new and interesting applications of sapphire, it is worth mentioning the application of sapphire substrates in the production of blue semi-conductive lasers for systems requiring high-density data recording, for example, modern game consoles, Blue-ray players and other HD-DVD devices.
Monocrystal provides 2", 3", 4", 6", 8" and 10" epi-polished wafers, as well as standard as cut/ground blanks made to customer specifications (miscut, with polished back surface, of different thickness). Wafers and blanks are produced from crystals grown using the Kyropoulos method.
Advantages of our wafers:
high material purity: > 99.997%;
low impurity content Ti: < 1 ppm;
low dislocation density: < 103 cm-2;
orientation tolerance: up to ± 0.05 degrees.
Sapphire wafers for semiconductive items are supplied with different orientations, including M, А, R, and C planes. Production of various shapes is possible (round, rectangular or square), from a few mm to 250 mm in diameter per customer specifications.
Wafer thickness varies from 0.15 mm to 1.0 mm depending on the field of application. Our equipment enables the control of wafer production from the moment of crystal growth to manufacturing of the final product.
Monocrystal provides 2", 3", 4", 6", 8" and 10" epi-polished wafers, as well as standard as cut/ground blanks made to customer specifications (miscut, with polished back surface, of different thickness). Wafers and blanks are produced from crystals grown using the Kyropoulos method.
Advantages of our wafers:
high material purity: > 99.997%;
low impurity content Ti: < 1 ppm;
low dislocation density: < 103 cm-2;
orientation tolerance: up to ± 0.05 degrees.
Sapphire wafers for semiconductive items are supplied with different orientations, including M, А, R, and C planes. Production of various shapes is possible (round, rectangular or square), from a few mm to 250 mm in diameter per customer specifications.
Wafer thickness varies from 0.15 mm to 1.0 mm depending on the field of application. Our equipment enables the control of wafer production from the moment of crystal growth to manufacturing of the final product.