System for rapid thermal annealing process of semiconductor wafers in inert atmosphere
System is intended for R&D activities and pilot production. Maximum diameter of wafers is 100 mm. Wafer is loaded to the chamber manually through the side quick access door and placed on heat-compensating table made of pyrolytic graphite. There is a heater based on the system of linear halogen lamps under the table. This design ensures uniform wafer heating, having
heterogeneous absorption of infrared emission along its surface (for example, wafer with formed topology).